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Aluminium nitride ceramic substrates (AlN)

Aluminium nitride ceramic substrates (AlN)

Aluminium nitride ceramic substrates (AlN)
Aluminium nitride ceramic substrates (AlN)

Büyük resim :  Aluminium nitride ceramic substrates (AlN)

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Aluminium nitride ceramic substrates (AlN)

Açıklama
Vurgulamak:

Aluminium nitride ceramic substrates

,

AlN ceramic thermal substrates

,

AlN ceramic circuit substrates

Aluminium nitride ceramic substrates (AlN)

 

The main advantage of substrates made on the basis of aluminum nitride (AlN) is the high thermal conductivity, varying in the range from 170 to 230 W/m*K. That is why AlN-based ceramics are used in cases where it is necessary to remove significant amounts of heat generated, for example, in cases where operating currents are units, tens of amperes. Also, AlN has a high purity of structure and chemical uniformity, which directly affects the uniformity of properties. Aluminum nitride is highly inert to the effects of almost all types of acids (with the exception of hot mineral species).
The products are made of ceramics based on aluminum nitride AlN according to the technical specifications 23.43.10.110-002-34576770-2016- DAYS.

 

 

Specifications

Properties

Materials

AlN-170

AlN-200

AlN-230

Colour

gray

gray

brown

Bulk density

г/см3

≥ 3,20

≥ 3,20

≥ 3,30

Surface roughness Ra (grinding)

мкм

0,2 ~ 0,7

0,2 ~ 0,7

0,3

Surface roughness Ra (polished)

мкм

≤ 0,05

≤ 0,05

≤ 0,05

Механические характеристики

Flexural strength

МПа

≥ 380

≥ 380

≥ 350

Compressive strength

МПа

-

-

-

Elastic modulus

ГПа

320

320

320

Vickers Hardness

ГПа

11

11

11

Fracture toughness

Мпа*м^0,5

-

-

2,4

 

Physical properties

Coefficient of thermal expansion (40-300°C)

10 -6 /°C

2,0 ~ 3,0

2,0 ~ 3,0

4,6

Coefficient of thermal expansion (300-800 С)

 

2,5 ~ 3,5

2,0 ~ 3,0

5,2

Thermal conductivity (25°C)

Вт/м∙°K

≥ 170

≥ 200

≥ 230

Specific heat capacity

Дж/Кг∙°К

720

720

720

Dielectric strength

 

≥ 17

 

≥ 15

Volumetric resistance(25 С)

 

≥ 1013

≥ 1013

≥ 1013

Dielectric constant (1 МГц)

-

8 ~ 10

8 ~ 10

8,5

Dielectric losses(1МГц, 25°C)

∙10 -4

2

2

3

Sizes

Distance between scribing lines, мм

 

1±0,05

1±0,05

1±0,05

Minimum hole diameter, мм

 

0,1±0,05

0,1±0,05

0,2±0,05

Thickness, мм

 

0,385 ~ 1,500

0,385 ~ 1,500

0,25 ~ 1,00

Thickness tolerance (min), мм

 

± 0,03

± 0,03

±10%, не менее ±0,04 мм

Dimensions (max), мм

 

127 x 127

127 x 127

177,8 x 127

Dimensional tolerance (min), мм

 

(+0,15 / -0,05)

(+0,15 / -0,05)

±1%, не менее ±0,1 мм

Technological properties

DBC technology

Aluminium nitride ceramic substrates (AlN) 0

Aluminium nitride ceramic substrates (AlN) 0

-

Thick-film technology

Aluminium nitride ceramic substrates (AlN) 0

Aluminium nitride ceramic substrates (AlN) 0

Aluminium nitride ceramic substrates (AlN) 0

Thin-film technology

Aluminium nitride ceramic substrates (AlN) 0

Aluminium nitride ceramic substrates (AlN) 0

Aluminium nitride ceramic substrates (AlN) 0

Application area

 

Ceramics made on the basis of aluminum nitride ALN has a fairly wide range of applications and will allow you to effectively solve problems, regardless of the level of complexity:

 

 

  • a blank for ceramic printed circuit boards that require high reliability indicators;

  • manufacturing of substrates for semiconductors;

  • as a heat-absorbing element in LED circuits and high-power electronic devices;

  • base for high-frequency resistors and as enclosures for various circuits;

  • substrate for laser diodes, semiconductor crystals;

  • for the manufacture of sensors and other devices operated in the most difficult conditions, etc.

İletişim bilgileri
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

İlgili kişi: Daniel

Tel: 18003718225

Faks: 86-0371-6572-0196

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